分離式半導體產(chǎn)品 SI4965DY-T1-GE3品牌、價格、PDF參數(shù)

SI4965DY-T1-GE3 • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
SI4965DY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 8V 8SOIC 0 2,500:$0.69390
SI7980DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 8A PPAK 8SOIC 0 3,000:$0.68850
SI4944DY-T1-GE3 Vishay Siliconix MOSFET N-CH DUAL 30V 8-SOIC 0 2,500:$0.67905
SI4569DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 8-SOIC 0 2,500:$0.67905
SI7904DN-T1-GE3 Vishay Siliconix MOSFET DUAL N-CH D-S 20V 1212-8 0 3,000:$0.67200
SI7214DN-T1-GE3 Vishay Siliconix MOSFET DUAL N-CH D-S 30V 1212-8 0 3,000:$0.67200
SI7228DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V PWRPAK 1212-8 0 3,000:$0.61600
SIZ720DT-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V POWERPAIR 0 3,000:$0.60900
SIZ710DT-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V POWERPAIR 5 1:$1.63000
25:$1.29000
100:$1.16100
250:$1.01052
500:$0.90300
1,000:$0.70950
SIZ710DT-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V POWERPAIR 5 1:$1.63000
25:$1.29000
100:$1.16100
250:$1.01052
500:$0.90300
1,000:$0.70950
SI4965DY-T1-GE3 • PDF參數(shù)
類別: 分離式半導體產(chǎn)品
FET 型: 2 個 P 溝道(雙)
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 8V
電流 - 連續(xù)漏極(Id) @ 25° C: -
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 21 毫歐 @ 8A,4.5V
Id 時的 Vgs(th)(最大): 450mV @ 250µA
閘電荷(Qg) @ Vgs: 55nC @ 4.5V
輸入電容 (Ciss) @ Vds: -
功率 - 最大: -
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: 8-SOICN
包裝: 帶卷 (TR)