分離式半導(dǎo)體產(chǎn)品 SI3590DV-T1-GE3品牌、價(jià)格、PDF參數(shù)

SI3590DV-T1-GE3 • 品牌、價(jià)格
元器件型號 廠商 描述 數(shù)量 價(jià)格
SI3590DV-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 6-TSOP 0 3,000:$0.33350
SI4947ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 65 1:$1.00000
25:$0.77200
100:$0.68100
250:$0.59020
500:$0.49940
1,000:$0.39725
SI4947ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 65 1:$1.00000
25:$0.77200
100:$0.68100
250:$0.59020
500:$0.49940
1,000:$0.39725
SI4947ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 0 2,500:$0.32915
5,000:$0.30645
12,500:$0.29510
25,000:$0.28375
62,500:$0.27921
125,000:$0.27240
SI4953ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 11 1:$0.95000
25:$0.73120
100:$0.64500
250:$0.55900
500:$0.47300
1,000:$0.37625
SI4953ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 11 1:$0.95000
25:$0.73120
100:$0.64500
250:$0.55900
500:$0.47300
1,000:$0.37625
SI4953ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 0 2,500:$0.31175
5,000:$0.29025
12,500:$0.27950
25,000:$0.26875
62,500:$0.26445
125,000:$0.25800
SI4532ADY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 8-SOIC 0 2,500:$0.29580
SI9936BDY-T1-GE3 Vishay Siliconix MOSFET DUAL N-CH 30V 4.5A 8-SOIC 0 2,500:$0.28710
SI3590DV-T1-GE3 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: N 和 P 溝道
FET 特點(diǎn): 邏輯電平門
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 2.5A,1.7A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 77 毫歐 @ 3A,4.5V
Id 時的 Vgs(th)(最大): 1.5V @ 250µA
閘電荷(Qg) @ Vgs: 4.5nC @ 4.5V
輸入電容 (Ciss) @ Vds: -
功率 - 最大: 830mW
安裝類型: 表面貼裝
封裝/外殼: 6-TSOP(0.065",1.65mm 寬)
供應(yīng)商設(shè)備封裝: 6-TSOP
包裝: 帶卷 (TR)
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