分離式半導(dǎo)體產(chǎn)品 SI1553DL-T1-GE3品牌、價(jià)格、PDF參數(shù)

SI1553DL-T1-GE3 • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
SI1553DL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC70-6 0 1:$0.63000
25:$0.44280
100:$0.37950
250:$0.32776
500:$0.28176
1,000:$0.21850
SI1553DL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC70-6 0 3,000:$0.17825
6,000:$0.16675
15,000:$0.15525
30,000:$0.14663
75,000:$0.14375
150,000:$0.13800
SI1902DL-T1-GE3 Vishay Siliconix MOSFET N-CH G-S 20V DUAL SC-70-6 0 1:$0.63000
25:$0.43880
100:$0.37620
250:$0.32492
500:$0.27930
1,000:$0.21660
SI1902DL-T1-GE3 Vishay Siliconix MOSFET N-CH G-S 20V DUAL SC-70-6 0 1:$0.63000
25:$0.43880
100:$0.37620
250:$0.32492
500:$0.27930
1,000:$0.21660
SI1902DL-T1-GE3 Vishay Siliconix MOSFET N-CH G-S 20V DUAL SC-70-6 0 3,000:$0.17670
6,000:$0.16530
15,000:$0.15390
30,000:$0.14535
75,000:$0.14250
150,000:$0.13680
SI1033X-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 145MA SC89 0 3,000:$0.16740
SI1553DL-T1-GE3 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: N 和 P 溝道
FET 特點(diǎn): 邏輯電平門
漏極至源極電壓(Vdss): 20V
電流 - 連續(xù)漏極(Id) @ 25° C: 660mA,410mA
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 385 毫歐 @ 660ma,4.5V
Id 時(shí)的 Vgs(th)(最大): 600mV @ 250µA
閘電荷(Qg) @ Vgs: 1.2nC @ 4.5V
輸入電容 (Ciss) @ Vds: -
功率 - 最大: 270mW
安裝類型: 表面貼裝
封裝/外殼: 6-TSSOP,SC-88,SOT-363
供應(yīng)商設(shè)備封裝: SC-70-6
包裝: 剪切帶 (CT)