元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
SI1553DL-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V SC70-6 | 0 | 1:$0.63000 25:$0.44280 100:$0.37950 250:$0.32776 500:$0.28176 1,000:$0.21850 |
SI1553DL-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V SC70-6 | 0 | 3,000:$0.17825 6,000:$0.16675 15,000:$0.15525 30,000:$0.14663 75,000:$0.14375 150,000:$0.13800 |
SI1902DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH G-S 20V DUAL SC-70-6 | 0 | 1:$0.63000 25:$0.43880 100:$0.37620 250:$0.32492 500:$0.27930 1,000:$0.21660 |
SI1902DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH G-S 20V DUAL SC-70-6 | 0 | 1:$0.63000 25:$0.43880 100:$0.37620 250:$0.32492 500:$0.27930 1,000:$0.21660 |
SI1902DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH G-S 20V DUAL SC-70-6 | 0 | 3,000:$0.17670 6,000:$0.16530 15,000:$0.15390 30,000:$0.14535 75,000:$0.14250 150,000:$0.13680 |
SI1033X-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 145MA SC89 | 0 | 3,000:$0.16740 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | N 和 P 溝道 |
FET 特點(diǎn): | 邏輯電平門 |
漏極至源極電壓(Vdss): | 20V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 660mA,410mA |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 385 毫歐 @ 660ma,4.5V |
Id 時(shí)的 Vgs(th)(最大): | 600mV @ 250µA |
閘電荷(Qg) @ Vgs: | 1.2nC @ 4.5V |
輸入電容 (Ciss) @ Vds: | - |
功率 - 最大: | 270mW |
安裝類型: | 表面貼裝 |
封裝/外殼: | 6-TSSOP,SC-88,SOT-363 |
供應(yīng)商設(shè)備封裝: | SC-70-6 |
包裝: | 剪切帶 (CT) |