分離式半導(dǎo)體產(chǎn)品 SI4992EY-T1-GE3品牌、價格、PDF參數(shù)

SI4992EY-T1-GE3 • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
SI4992EY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 75V 8-SOIC 0
SI5504BDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 1206-8 738 1:$1.10000
25:$0.87000
100:$0.78300
250:$0.68152
500:$0.60900
1,000:$0.47850
SI5504BDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 1206-8 738 1:$1.10000
25:$0.87000
100:$0.78300
250:$0.68152
500:$0.60900
1,000:$0.47850
SI5504BDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 1206-8 0 3,000:$0.40600
6,000:$0.38570
15,000:$0.36975
30,000:$0.35960
75,000:$0.34800
SI4210DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 200 1:$0.77000
25:$0.59520
100:$0.52500
250:$0.45500
500:$0.38500
1,000:$0.30625
SI4210DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 200 1:$0.77000
25:$0.59520
100:$0.52500
250:$0.45500
500:$0.38500
1,000:$0.30625
SI4210DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.25375
5,000:$0.23625
12,500:$0.22750
25,000:$0.21875
SI4992EY-T1-GE3 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: 2 個 N 溝道（雙）
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 75V
電流 - 連續(xù)漏極(Id) @ 25° C: 3.6A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 48 毫歐 @ 4.8A，10V
Id 時的 Vgs(th)（最大）: 3V @ 250µA
閘電荷(Qg) @ Vgs: 21nC @ 10V
輸入電容 (Ciss) @ Vds: -
功率 - 最大: 1.4W
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝: 8-SOICN
包裝: 帶卷 (TR)