元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
SI6966DQ-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL G-S 20V 8TSSOP | 0 | |
SI6955ADQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 30V 8-TSSOP | 0 | |
SI3552DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH D-S 30V 6-TSOP | 0 | 3,000:$0.30450 6,000:$0.28350 15,000:$0.27300 30,000:$0.26250 75,000:$0.25830 150,000:$0.25200 |
SI5980DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V PPAK CHIPFET | 432 | 1:$0.84000 25:$0.64600 100:$0.57000 250:$0.49400 500:$0.41800 1,000:$0.33250 |
SI5980DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V PPAK CHIPFET | 432 | 1:$0.84000 25:$0.64600 100:$0.57000 250:$0.49400 500:$0.41800 1,000:$0.33250 |
SI6933DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 30V 8-TSSOP | 0 | |
SI5980DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V PPAK CHIPFET | 0 | 3,000:$0.27550 6,000:$0.25650 15,000:$0.24700 30,000:$0.23750 75,000:$0.23370 150,000:$0.22800 |
SI3585DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 6-TSOP | 740 | 1:$0.84000 25:$0.64600 100:$0.57000 250:$0.49400 500:$0.41800 1,000:$0.33250 |
SI5975DC-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 12V 3.1A CHIPFET | 0 | |
SI5943DU-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH 12V 6A 8PWRPAK | 0 | |
SI5935DC-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH 20V 1206-8 | 0 | |
SI5933DC-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH 20V 2.7A 1206-8 | 0 | |
SI5915DC-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 8V 3.4A 1206-8 | 0 | |
SI5915BDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V CHIPFET 1206-8 | 0 | |
SI5905BDC-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH D-S 8V 1206-8 | 0 | |
SI4940DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 40V 8-SOIC | 0 | |
SI4908DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 40V 5A 8-SOIC | 0 | |
SI4834BDY-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 30V 5.7A 8-SOIC | 0 | |
SI4830ADY-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 30V 5.7A 8-SOIC | 0 | |
SI4565ADY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 8-SOIC | 0 | |
SI4230DY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 8A 8SOIC | 0 | |
SI3909DV-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 6TSOP | 0 | |
SI3905DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 8V 6-TSOP | 0 | |
SI5920DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 1206-8 | 0 | |
SI5920DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 1206-8 | 0 | |
SI5920DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 1206-8 | 0 | |
SI5511DC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 1206-8 | 0 | |
SI5511DC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 1206-8 | 0 | |
SI5511DC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 1206-8 | 0 | |
SI4501ADY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 8-SOIC | 0 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | 2 個 N 溝道(雙) |
FET 特點: | 邏輯電平門 |
漏極至源極電壓(Vdss): | 20V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 4A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 30 毫歐 @ 4.5A,4.5V |
Id 時的 Vgs(th)(最大): | 1.4V @ 250µA |
閘電荷(Qg) @ Vgs: | 20nC @ 4.5V |
輸入電容 (Ciss) @ Vds: | - |
功率 - 最大: | 830mW |
安裝類型: | 表面貼裝 |
封裝/外殼: | 8-TSSOP(0.173",4.40mm 寬) |
供應(yīng)商設(shè)備封裝: | 8-TSSOP |
包裝: | 帶卷 (TR) |