| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI4204DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8-SOIC | 2,500 | 2,500:$0.82350 5,000:$0.79300 12,500:$0.76250 25,000:$0.74725 62,500:$0.73200 |
| SI4204DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8-SOIC | 3,070 | 1:$2.14000 25:$1.64720 100:$1.49450 250:$1.34200 500:$1.15900 1,000:$0.97600 |
| SI4204DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8-SOIC | 3,070 | 1:$2.14000 25:$1.64720 100:$1.49450 250:$1.34200 500:$1.15900 1,000:$0.97600 |
| SI4904DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 8-SOIC | 2,500 | 2,500:$0.97200 5,000:$0.93600 12,500:$0.90000 25,000:$0.88200 62,500:$0.86400 |
| SI4904DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 8-SOIC | 3,194 | 1:$2.52000 25:$1.94400 100:$1.76400 250:$1.58400 500:$1.36800 1,000:$1.15200 |
| SI4904DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 8-SOIC | 3,194 | 1:$2.52000 25:$1.94400 100:$1.76400 250:$1.58400 500:$1.36800 1,000:$1.15200 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | 2 個(gè) N 溝道（雙） |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 19.8A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 4.6 毫歐 @ 10A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.4V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 45nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 2110pF @ 10V |
| 功率 - 最大: | 3.25W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |