參數(shù)資料
型號(hào)： EL1056ACM
廠商： INTERSIL CORP
元件分類(lèi)： 外設(shè)及接口
英文描述： Monolithic High-Speed Pin Driver
中文描述： 0.06 A BUF OR INV BASED PRPHL DRVR, PDSO24
封裝： SOL-24
文件頁(yè)數(shù)： 9/16頁(yè)
文件大?。?/td> 311K
代理商： EL1056ACM
EL1056ACEL1056C
Monolithic High-Speed Pin Driver
Absolute Maximum Ratings (T
A
e
25 C)
VS
Voltage between Va and Vba33V
Vb
Supply Voltage
b
18V
Ba
Supply Voltage
VINH to Va
Bb
Supply Voltage
Vb to VINL
ISR
Input Current
0 mA to 3 mA
VSR
Input Voltage
Power-Down Mode
b
03V to a6V
Shunta
Input Voltage
(Ba) b5V to Ba
Shuntb
Input Voltage
Bb to (Bb) a5V
Data Data Input Voltages
Vb to Va or
g
6V Differential
OE OE
Input Voltages
Vb to Va or
g
6V Differential
E E
Input Voltages
Vb to Va or
g
6V Differential
Sense Output Voltage
Vb to Va
VINH Input Voltage
VINL b03V to Ba
VINL Input Voltage
Bb to VINH a03V
IOUT Output Current
b
60 mA to a60 mA
TJ
Junction Temperature
150 C
TA
Operating Ambient Temperature
Range
b
0 Cto a75 C
TST
Storage Temperature
b
65 Cto a150 C
PD
Power Dissipation (TA e 25 C)
(See Curves)
31W
Important Note
All parameters having MinMax specifications are guaranteed The Test Level column indicates the specific device testing actually
performed during production and Quality inspection Elantec performs most electrical tests using modern high-speed automatic test
equipment specifically the LTX77 Series system Unless otherwise noted all tests are pulsed tests therefore TJeTCeTA
Test Level
Test Procedure
I
100% production tested and QA sample tested per QA test plan QCX0002
II
100% production tested at TA e 25 C and QA sample tested at TA e 25 C
TMAX and TMIN per QA test plan QCX0002
III
QA sample tested per QA test plan QCX0002
IV
Parameter is guaranteed (but not tested) by Design and Characterization Data
V
Parameter is typical value at TA e 25 C for information purposes only
DC Electrical Characteristics
TA e 25 C Vae Bae15V Vbe Bbeb10V RSHUNTa e RSHUNTb e 65X no load Data E and OE from b16V to
b
08V ISR e 800 mA VINH e 5V VINL eb16V
Parameter
Description
Min
Typ
Max
Test
Units
Level
IS
(Va) a (Ba) (Vb) a (Bb) Supply Currents
52
60
I
mA
IS dis
(Va) a (Ba) (Vb) a (Bb) Supply Currents Disabled
17
25
I
mA
IVINH
b
20
b
320
I
mA
IVINL
b
20
2
20
I
mA
IDATA
b
30
b
15
30
I
mA
IOE
OE Input Current
b
30
b
14
30
I
mA
IE
E Input Current
b
20
7
20
I
mA
VSR
Voltage at ISR Pin
0
20
40
I
mV
ISHUNTa ISHUNTb
47
I
mA
VSHUNTa VSHUNTb
Sense Threshold at Shunts
160
200
250
I
mV
ISENSE
Sense Output Currents
1
15
2
I
mA
VOS
Output Offset Data High VINH e 0V VINL eb16V
b
50
I
mV
Data Low VINL e 0V VINH e 5V
b
100
I
mV
2
TD
is
27in
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