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參數(shù)資料
| 型號： | EPC8 |
| 廠商： | Altera Corporation |
| 英文描述： | Configuration Devices for SRAM-Based LUT Devices |
| 中文描述： | 配置SRAM器件基于LUT的器件 |
| 文件頁數(shù)： | 25/36頁 |
| 文件大小： | 283K |
| 代理商： | EPC8 |
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Altera Corporation
25
Configuration Devices for SRAM-Based LUT Devices Data Sheet
For EPC1 and EPC1441 configuration devices, 3.3-V or 5.0-V operation is
controlled by a programming bit in the POF. The programming bit value
is determined by the core supply voltage of the targeted device during
design compilation with the MAX+PLUS II software. For example, EPC1
devices are programmed automatically to operate in 3.3-V mode when
configuring FLEX 10KA devices, which have a V
CC
voltage of 3.3 V. In this
example, the EPC1 device’s
VCC
pin is connected to a 3.3-V power supply.
Designers may choose to set the configuration device for low voltage
when using the MultiVolt
TM
feature, which allows an ACEX, APEX,
APEX II, FLEX, or Mercury device to bridge between systems operating
with different voltages. When compiling for 3.3-V FLEX 6000 devices, set
the configuration device for low-voltage operation. To set the EPC1 and
EPC1441 configuration devices for low-voltage operation, turn on the
Low-Voltage I/O
option in the
Global Project Device Options
dialog box
(Assign menu) in the MAX+PLUS II software.
Configuration Chain with Multiple Voltage Levels
An EPC2 or EPC1 device can configure a device chain with multiple
voltage levels. All 3.3-V and 2.5-V ACEX, APEX, APEX II, FLEX, and
Mercury devices can be driven by higher-voltage signals.
When configuring a mixed-voltage device chain, the APEX II, APEX 20K,
Mercury, ACEX 1K, or FLEX devices’
VCCINT
and
VCCIO
pins may be
connected to 2.5 V, 3.3 V, or 5.0 V, depending upon the device. The
configuration device may be powered at 3.3 V or 5.0 V. If an EPC1,
EPC1441, EPC1213, EPC1064, or EPC1064V configuration device is
powered at 3.3 V, the
nSTATUS
and
CONF_DONE
pull-up resistors must be
connected to 3.3 V. If these configuration devices are powered at 5.0 V, the
nSTATUS
and
CONF_DONE
pull-up resistors must be connected to 3.3 V or
5.0 V.
相關PDF資料 |
PDF描述 |
|---|---|
| EPC1 | 433800612 |
| EPC1 | Configuration Devices for SRAM-Based LUT Devices |
| EPC1064 | Configuration Devices for SRAM-Based LUT Devices |
| EPC1064V | Configuration Devices for SRAM-Based LUT Devices |
| EPC1213 | Configuration Devices for SRAM-Based LUT Devices |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EPC-8 | 制造商:Curtis Industries 功能描述: |
| EPC8002 | 功能描述:TRANS GAN 65V 2.7A BUMPED DIE 制造商:epc 系列:eGaN? 包裝:剪切帶（CT） 零件狀態(tài):有效 FET 類型:GaNFET N 通道，氮化鎵 FET 功能:標準 漏源極電壓（Vdss）:65V 電流 - 連續(xù)漏極（Id）（25°C 時）:2A（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:530 毫歐 @ 500mA，5V 不同 Id 時的 Vgs（th）（最大值）:2.5V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:- 不同 Vds 時的輸入電容（Ciss）:21pF @ 32.5V 功率 - 最大值:- 工作溫度:-40°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:模具 供應商器件封裝:模具 標準包裝:1 |
| EPC8002ENGR | 制造商:Efficient Power Conversion 功能描述:TRANS GAN 65V 2A BUMPED DIE |
| EPC8002TENGR | 制造商:Efficient Power Conversion 功能描述:TRANS GAN 65V 2A BUMPED DIE |
| EPC8003ENGR | 制造商:Efficient Power Conversion 功能描述:TRAN GAN 100V 2.5A BUMPED DIE |
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