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參數(shù)資料
| 型號： | FMC6G10US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Sweep Function Generator; Bandwidth Max:20MHz; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
| 中文描述： | 10 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 21PM-AA, 21 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 649K |
| 代理商： | FMC6G10US60 |
2001 Fairchild Semiconductor Corporation
FMC6G10US60 Rev. A3
F
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 17. RBSOA Characteristics
Fig 18. Transient Thermal Impedance
0
10
20
30
0
3
6
9
12
15
V
CC
= 100 V
200 V
300 V
Common Emitter
R
L
= 30
T
C
= 25
℃
G
G
Gate Charge, Q
g
[ nC ]
1
10
100
1000
1
10
Safe Operating Area
V
GE
= 20V, T
C
= 100
℃
50
C
C
Collector-Emitter Voltage, V
CE
[V]
5
10
15
20
100
1000
Eon
Eoff
Common Emitter
V
GE
=
±
15V, R
G
= 20
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Collector Current, I
C
[A]
0.1
1
10
100
1000
0.01
0.1
1
10
100
Single Nonrepetitive
Pulse T
= 25
℃
Curves must be derated
linearly with increase
in temperature
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
DC Operation
1
100us
50us
C
C
Collector-Emitter Voltage, V
CE
[V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
10
IGBT :
DIODE :
T
℃
/
Rectangular Pulse Duration [sec]
0
100
200
300
400
500
600
700
0.1
1
10
50
Single Nonrepetitive
Pulse T
J
≤
125
℃
V
GE
= 15V
R
G
= 20
C
Collector-Emitter Voltage, V
CE
[V]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FMC6G15US60 | Compact & Complex Module |
| FMC6G20US60 | Multi-Function Generator RoHS Compliant: NA |
| FMC6G30US60 | Function Generator; Bandwidth Max:120MHz; Amplitude Accuracy :0.01dB; Frequency Max:120MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
| FMC6G50US60 | Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:21.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 21.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency |
| FMC7G15US60 | Compact & Complex Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMC6G15US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC6G20US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC6G30US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC6G50US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC700 | 制造商:Black Box Corporation 功能描述:CAT 7 OUTLET 4 PORT JACK |
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