參數(shù)資料
型號: FMC6G20US60
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Multi-Function Generator RoHS Compliant: NA
中文描述: 20 A, 600 V, N-CHANNEL IGBT
封裝: 21PM-AA, 21 PIN
文件頁數(shù): 6/9頁
文件大?。?/td> 648K
代理商: FMC6G20US60
2001 Fairchild Semiconductor Corporation
FMC6G20US60 Rev. A3
F
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 17. RBSOA Characteristics
Fig 18. Transient Thermal Impedance
10
15
20
25
30
35
40
100
1000
Eoff
Eon
Eoff
Common Emitter
V
GE
=
±
15V, R
G
= 10
T
C
= 25
━━
T
C
= 125
------
S
Collector Current, I
C
[A]
1
10
100
1000
1
10
100
Safe Operating Area
V
GE
= 20V, T
C
= 100
C
C
Collector-Emitter Voltage, V
CE
[V]
0.3
1
10
100
1000
0.01
0.1
1
10
100
Single Nonrepetitive
Pulse T
C
= 25
Curves must be derated
linearly with increase
in temperature
50us
100us
1
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
C
C
Collector-Emitter Voltage, V
CE
[V]
0
10
20
30
40
50
60
0
3
6
9
12
15
300 V
200 V
V
CC
= 100 V
Common Emitter
R
L
= 15
T
C
= 25
G
G
Gate Charge, Q
g
[ nC ]
0
100
200
300
400
500
600
700
0.1
1
10
80
Single Nonrepetitive
Pulse T
125
V
GE
= 15V
R
G
= 10
C
Collector-Emitter Voltage, V
CE
[V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
10
IGBT :
DIODE :
T
/
Rectangular Pulse Duration [sec]
相關(guān)PDF資料
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