參數(shù)資料
型號: FQB17N08L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 80V LOGIC N-Channel MOSFET
中文描述: 16.5 A, 80 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
封裝: D2PAK-3
文件頁數(shù): 3/9頁
文件大?。?/td> 571K
代理商: FQB17N08L
F
Rev. A2, December 2000
2000 Fairchild Semiconductor International
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
V
DS
= 40V
V
DS
= 64V
Note : I
D
= 16.5A
V
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
100
200
300
400
500
600
700
800
900
1000
1100
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0.2
0.4
0.6
V
SD
, Source-Drain Voltage [V]
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
25
175
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
I
D
0
10
20
30
40
50
0.0
0.1
0.2
0.3
0.4
Note : T
J
= 25
V
GS
= 10V
V
GS
= 5V
R
D
]
D
I
D
, Drain Current [A]
0
2
4
6
8
10
10
-1
10
0
10
1
Notes :
1. V
DS
= 25V
2. 250
μ
s Pulse Test
-55
175
25
I
D
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
V
GS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
I
D
,
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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