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參數(shù)資料
| 型號： | FQB19N10L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 100V Logic N-Channel MOSFET(漏源電壓為100V的邏輯N溝道增強型MOS場效應管) |
| 中文描述： | 19 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 609K |
| 代理商： | FQB19N10L |
2000 Fairchild Semiconductor International
August 2000
Rev. A, August 2000
F
QFET
TM
FQB19N10L / FQI19N10L
100V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as high efficiency
switching DC/DC converters, and DC motor control.
Features
19A, 100V, R
DS(on)
= 0.1
@V
GS
= 10 V
Low gate charge ( typical 14 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
! "
!
!
S
!
"
"
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB19N10L / FQI19N10L
100
19
13.5
76
±
20
220
19
7.5
6.0
3.75
75
0.5
-55 to +175
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
2.0
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FQI19N10 | 100V N-Channel MOSFET(漏源電壓為100V的N溝道增強型MOS場效應管) |
| FQB19N10 | 100V N-Channel MOSFET(漏源電壓為100V的N溝道增強型MOS場效應管) |
| FQI1N60 | 600V N-Channel MOSFET |
| FQB1N60 | 600V N-Channel MOSFET(漏源電壓為600V的N溝道增強型MOS場效應管) |
| FQI1P50 | 500V P-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQB19N10LTM | 功能描述:MOSFET 100V N-Ch Log Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB19N10TM | 功能描述:MOSFET 100V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB19N20 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| FQB19N20C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| FQB19N20CTM | 功能描述:MOSFET 200V N-Channel Adv Q-FET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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