參數(shù)資料
型號： FQB1P50
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 500V P-Channel MOSFET(漏源電壓為500V的P溝道增強型MOS場效應管)
中文描述： 1.5 A, 500 V, 10.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, D2PAK-3
文件頁數(shù)： 2/9頁
文件大小： 631K
代理商： FQB1P50
2000 Fairchild Semiconductor International
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A, June 2000
Elerical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 88mH, I
= -1.5A, V
DD
= -50V, R
= 25
,
Starting T
= 25°C
3. I
≤
-1.5A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250
μ
A
-500
--
--
V
Breakdown Voltage Temperature
I
D
= -250
μ
A, Referenced to 25°C
--
-
--
V/°C
V
DS
= -500 V, V
GS
= 0 V
V
DS
= -400 V, T
C
= 125°C
V
GS
= -30 V, V
DS
= 0 V
V
GS
= 30 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
-1
-10
-100
100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= -250
μ
A
-3.0
--
-5.0
V
V
GS
= -10 V, I
D
= -0.75 A
--
8.0
10.5
V
DS
= -50 V, I
D
= -0.75 A
--
1.26
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
270
40
6.0
350
50
8.0
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= -250 V, I
D
= -1.5 A,
R
G
= 25
--
--
--
--
--
--
--
9.0
25
27
30
11
2.0
5.6
30
60
65
70
14
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= -400 V, I
D
= -1.5 A,
V
GS
= -10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
-1.5
-6.0
-5.0
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= -1.5 A
V
GS
= 0 V, I
S
= -1.5 A,
dI
F
/ dt = 100 A/
μ
s
200
0.7
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