參數(shù)資料
型號: FQB33N10L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 100V LOGIC N-Channel MOSFET
中文描述: 33 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: ROHS COMPLIANT, D2PAK-3
文件頁數(shù): 6/9頁
文件大?。?/td> 660K
代理商: FQB33N10L
2000 Fairchild Semiconductor International
F
Rev. A, September 2000
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
as DUT
V
GS
I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Period
-Gate Pulse Width
-Gate Pulse Width
Same Type
dv/dt controlled by R
G
Body Diode
相關(guān)PDF資料
PDF描述
FQI33N10L 100V LOGIC N-Channel MOSFET
FQB34N20L 200V LOGIC N-Channel MOSFET
FQI34N20L LED 5MM QUAD SUP CLR GREEN PCMNT
FQB34N20 200V N-Channel MOSFET(漏源電壓為200V的N溝道增強(qiáng)型MOSFET)
FQB34P10 100V P-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQB33N10LTM 功能描述:MOSFET 100V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB33N10TM 功能描述:MOSFET 100V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB34N20 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET
FQB34N20L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V LOGIC N-Channel MOSFET
FQB34N20LTM 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube