- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375879 > FQB50N06L (FAIRCHILD SEMICONDUCTOR CORP) 60V LOGIC N-Channel MOSFET(漏源電壓為60V的邏輯N溝道增強型MOSFET) PDF資料下載
參數(shù)資料
| 型號： | FQB50N06L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V LOGIC N-Channel MOSFET(漏源電壓為60V的邏輯N溝道增強型MOSFET) |
| 中文描述： | 52.4 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, D2PAK-3 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 588K |
| 代理商： | FQB50N06L |
2000 Fairchild Semiconductor International
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A, April 2000
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 300
μ
H, I
= 52.4A, V
DD
= 25V, R
= 25
,
Starting T
= 25°C
3. I
52.4A, di/dt
300A/
μ
s, V
4. Pulse Test : Pulse width
300
μ
s, Duty cycle
5. Essentially independent of operating temperature
BV
Starting T
J
= 25°C
2%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
60
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.06
--
V/°C
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 48 V, T
C
= 150°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
1
10
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 26.2 A
V
GS
= 5 V, I
D
=26.2 A
V
DS
= 25 V, I
D
= 26.2 A
1.0
--
--
--
--
2.5
0.021
0.025
--
V
0.017
0.020
40
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1250
445
90
1630
580
120
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 30 V, I
D
= 26.2 A,
R
G
= 25
--
--
--
--
--
--
--
20
380
80
145
24.5
6
14.5
50
770
170
300
32
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 48 V, I
D
= 52.4 A,
V
GS
= 5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
65
125
52.4
210
1.5
--
--
A
A
V
ns
nC
V
GS
= 0 V, I
S
= 52.4 A
V
GS
= 0 V, I
S
= 52.4 A,
dI
F
/ dt = 100 A/
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FQB50N06 | 30V N-Channel PowerTrench MOSFET |
| FQB55N06 | 30V N-Channel PowerTrench MOSFET |
| FQI55N06 | 30V N-Channel PowerTrench MOSFET |
| FQB58N08 | 80V N-Channel MOSFET(漏源電壓為80V的N溝道增強型MOSFET) |
| FQI58N08 | 80V N-Channel MOSFET(漏源電壓為80V的N溝道增強型MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQB50N06LTM | 功能描述:MOSFET 60V N-Channel QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB50N06TM | 功能描述:MOSFET 60V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB55N06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V N-Channel MOSFET |
| FQB55N06TM | 功能描述:MOSFET 60V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB55N10 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D2-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D2-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:155W ;RoHS Compliant: Yes |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。