參數(shù)資料
型號(hào)： FQB60N03L
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： N-Channel Logic Level PWM Optimized Power MOSFET
中文描述： 51 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 238K
代理商： FQB60N03L
2002 Fairchild Semiconductor Corporation
FQB60N03L Rev. B
F
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(5)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 4.5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Unclamped Inductive Switching
t
AV
Avalanche Time
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 25V
V
GS
= 0V
V
GS
=
±
16V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 51A, V
GS
= 10V
I
D
= 27A, V
GS
= 4.5V
1
-
-
-
3
V
r
DS(ON)
Drain to Source On Resistance
0.010
0.017
0.0135
0.020
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
1650
800
200
25
13
1.5
4.3
4.5
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 27A
I
g
= 1.0mA
52
30
2.3
-
-
-
-
-
-
V
DD
= 15V, I
D
= 12A
V
GS
= 5V, R
GS
= 11
-
-
-
-
-
-
-
115
-
-
-
-
83
ns
ns
ns
ns
ns
ns
15
60
25
30
-
V
DD
= 15V, I
D
= 12A
V
GS
= 10V, R
GS
= 11
-
-
-
-
-
-
-
8
30
45
30
-
57
-
-
-
-
115
ns
ns
ns
ns
ns
ns
I
D
= 2.9A, L = 3.0mH
195
-
-
μ
s
V
SD
Source to Drain Diode Voltage
I
SD
= 27A
I
SD
= 20A
I
SD
= 27A, dI
SD
/dt = 100A/
μ
s
I
SD
= 27A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.5
1.0
71
104
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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