參數(shù)資料
型號(hào)： FQB7N10L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 100V LOGIC N-Channel MOSFET
中文描述： 7.3 A, 100 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
封裝： D2PAK-3
文件頁數(shù)： 1/9頁
文件大?。?/td> 556K
代理商： FQB7N10L
2000 Fairchild Semiconductor International
December 2000
Rev. A2, December 2000
F
QFET
TM
FQB7N10L / FQI7N10L
100V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as high
efficiency switching DC/DC converters, and DC motor
control.
superior
switching
Features
7.3A, 100V, R
DS(on)
= 0.35
@V
GS
= 10 V
Low gate charge ( typical 4.6 nC)
Low Crss ( typical 12 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
Low level gate drive requirments allowing
direct operationfrom logic drives
! "
!
!
S
!
"
"
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB7N10L / FQI7N10L
100
7.3
5.15
29.2
±
20
50
7.3
4.0
6.0
3.75
40
0.27
-55 to +175
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
3.75
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關(guān)PDF資料
PDF描述
FQB7N10 100V N-Channel MOSFET
FQI7N10 V5 Series Miniature Basic Switch, Single Pole Normally Open Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, 1,00 N [3.53 oz] Maximum Operating Force, Gold Contacts, Quick Connect Termination Silver/Silver Cadmium Oxide Contacts, Quick Connect Terminatio
FQB7N20 200V N-Channel MOSFET(漏源電壓為200V的N溝道增強(qiáng)型MOSFET)
FQI7N20 200V N-Channel MOSFET(漏源電壓為200V的N溝道增強(qiáng)型MOSFET)
FQB7N30 300V N0Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQB7N10LTM 功能描述:MOSFET 100V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB7N10TM 功能描述:MOSFET 100V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB7N20 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET
FQB7N20L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V LOGIC N-Channel MOSFET
FQB7N20LTM 功能描述:MOSFET 200V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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