參數(shù)資料
型號(hào)： FQI27P06
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Inductor; Inductor Type:Standard; Inductance:350uH; Series:CMS; DC Resistance Max:0.04ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:2A; Leaded Process Compatible:Yes; Leakage Inductance:3uH RoHS Compliant: Yes
中文描述： 27 A, 60 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝： ROHS COMPLIANT, I2PAK-3
文件頁數(shù)： 4/9頁
文件大?。?/td> 700K
代理商： FQI27P06
F
2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
※
N ote s :
1. Z
θ
2. D u ty F actor, D =t
1
/t
2
3. T
J M
- T
C
= P
D M
* Z
θ
J C
(t) = 1.25
℃
/W M ax.
J C
(t)
sing le pu lse
D = 0.5
0 .02
0 .01
0 .2
0 .05
0 .1
Z
θ
J
(
t
1
, S q u a re W a ve P u ls e D u ra tio n [s e c ]
25
50
75
100
125
150
175
0
5
10
15
20
25
30
-
D
,
T
C
, Case Temperature [
℃
]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
J
= 175
3. Single Pulse
o
C
o
C
-
D
,
-V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
※
Notes :
1. V
= -10 V
2. I
D
= -13.5 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
GS
= 0 V
2. I
D
= -250
μ
A
-
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
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參數(shù)描述
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