參數(shù)資料
型號(hào)： FQI28N15
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： 150V N-Channel MOSFET
中文描述： 28 A, 150 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
封裝： I2PAK-3
文件頁(yè)數(shù)： 1/9頁(yè)
文件大小： 627K
代理商： FQI28N15
2000 Fairchild Semiconductor International
December 2000
Rev. A2, December 2000
F
QFET
TM
FQB28N15 / FQI28N15
150V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as audio
amplifiers, high efficiency switching for DC/DC converters,
DC motor control, and uninterrupted power supplies.
superior
switching
Features
28A, 150V, R
DS(on)
= 0.09
@V
GS
= 10 V
Low gate charge ( typical 40 nC)
Low Crss ( typical 50 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
! "
!
!
S
!
"
"
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB28N15 / FQI28N15
150
28
19.8
112
±
25
300
28
16.8
5.5
3.75
168
1.12
-55 to +175
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
0.89
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關(guān)PDF資料
PDF描述
FQB28N15 150V N-Channel MOSFET
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FQB2N50 500V N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQI28N15TU 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI2N30 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:300V N-Channel MOSFET
FQI2N30TU 功能描述:MOSFET 300V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI2N50 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FQI2N60 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:600V N-Channel MOSFET
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