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參數(shù)資料
| 型號： | FQT13N06L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 60V LOGIC N-Channel MOSFET |
| 中文描述： | 2800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 675K |
| 代理商： | FQT13N06L |
F
Rev. A, May 2001
2001 Fairchild Semiconductor Corporation
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
※
Note :
1. V
= 10 V
2. I
D
= 1.4 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※
Note :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
,
T
C
, Case Temperature [
℃
]
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10 ms
DC
100 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
2
1 0
3
1 0
-1
1 0
0
1 0
1
1 0
2
※
N ote s :
1. Z
θ
2. D u ty F ac to r, D = t
1
/t
2
3. T
J M
- T
C
= P
D M
* Z
θ
(t) = 60
℃
/W M a x.
J C
(t)
sin g le p u lse
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
θ
J
(
t
1
, S q u a re W a v e P u lse D u ra tio n [s e c]
Typical Characteristics
(Continued)
t
1
P
DM
t
2
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQT13N06LTF | 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQT13N06TF | 功能描述:MOSFET 60V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQT1N60C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm |
| FQT1N60CTF_WS | 功能描述:MOSFET 600V 0.2A 11.5Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQT1N60CTF-WS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm |
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