參數(shù)資料
型號: FQU11P06
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 60V P-Channel MOSFET
中文描述: 9.4 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: IPAK-3
文件頁數(shù): 6/9頁
文件大小: 615K
代理商: FQU11P06
2002 Fairchild Semiconductor Corporation
Rev. B4, October 2002
F
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
(N-Channel)
V
GS
I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Period
-Gate Pulse Width
-Gate Pulse Width
Compliment of DUT
dv/dt controlled by R
G
Body Diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQU11P06 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P I-PAK
FQU11P06_09 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel MOSFET
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