參數(shù)資料
型號(hào)： FQU17N08
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 80V N-Channel MOSFET
中文描述： 12.9 A, 80 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝： IPAK-3
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 595K
代理商： FQU17N08
QFET
TM
2000 Fairchild Semiconductor International
January 2001
Rev. A1, January 2001
F
FQD17N08 / FQU17N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
high efficiency switching for DC/DC converters, and DC
motor control.
Features
12.9A, 80V, R
DS(on)
= 0.115
@V
GS
= 10 V
Low gate charge ( typical 12 nC)
Low Crss ( typical 28 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQD17N08 / FQU17N08
80
12.9
8.2
51.6
±
25
100
12.9
4.0
6.5
2.5
40
0.32
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
3.13
50
110
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
! "
!
!
S
!
"
"
D
G
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
相關(guān)PDF資料
PDF描述
FQD17P06 60V P-Channel MOSFET(漏源電壓為-60V、漏電流為-12A的P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管)
FQU17P06 60V P-Channel MOSFET(漏源電壓為-60V、漏電流為-12A的P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管)
FQD18N20V2 200V N-Channel MOSFET
FQU18N20V2 200V N-Channel MOSFET
FQD19N10L GIGATRUE CAT6 UNIVERSAL JACK, WHITE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQU17N08L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:80V LOGIC N-Channel MOSFET
FQU17N08LTU 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQU17P06 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P I-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, I-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH -60V -12A TO-251 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P CH, -60V, -12A, TO-251; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:44W; No. of Pins:3 ;RoHS Compliant: Yes
FQU17P06_09 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel MOSFET
FQU17P06TU 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*