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參數(shù)資料
| 型號： | FQU1N80 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 800V N-Channel MOSFET |
| 中文描述： | 1 A, 800 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT, IPAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 635K |
| 代理商： | FQU1N80 |
F
2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 0.5 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
0
※
N o tes :
1 . Z
θ
2 . D uty F acto r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
(t) = 2.78
℃
/W M a x.
J C
(t)
single p ulse
D = 0.5
0 .02
0 .01
0 .2
0 .05
0 .1
Z
θ
J
(
t
1
, S q u a re W a ve P u ls e D u ra tio n [se c ]
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
D
,
T
C
, Case Temperature [
℃
]
10
0
10
V
DS
, Drain-Source Voltage [V]
1
10
2
10
3
10
-2
10
-1
10
0
10
1
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
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