參數(shù)資料
型號： FQU9N08L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 80V Logic N-Channel MOSFET(漏源電壓為80V、漏電流為7.4A的邏輯N溝道增強型MOS場效應(yīng)管)
中文描述： 7.4 A, 80 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝： IPAK-3
文件頁數(shù)： 2/9頁
文件大?。?/td> 603K
代理商： FQU9N08L
Rev. A, June 2000
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
2000 Fairchild Semiconductor International
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.38mH, I
= 7.4A, V
DD
= 25V, R
G
= 25
,
Starting T
= 25°C
3. I
≤
9.3A, di/dt
≤
300A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
80
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.08
--
V/°C
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 64 V, T
C
= 125°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
1
10
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 3.7 A
V
GS
= 5 V, I
D
= 3.7 A
V
DS
= 25 V, I
D
= 3.7 A
1.0
--
2.0
0.21
0.23
--
V
--
0.15
0.17
4.8
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
215
70
16
280
90
20
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 40 V, I
D
= 9.3 A,
R
G
= 25
--
--
--
--
--
--
--
6.5
180
13
30
4.7
1.2
2.8
23
370
35
70
6.1
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 64 V, I
D
= 9.3 A,
V
GS
= 5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
54
80
7.4
29.6
1.5
--
--
A
A
V
ns
nC
V
GS
= 0 V, I
S
= 7.4 A
V
GS
= 0 V, I
S
= 9.3 A,
dI
F
/ dt = 100 A/
μ
s
相關(guān)PDF資料
PDF描述
FQU9N08 80V N-Channel MOSFET(漏源電壓為80V、漏電流為7.4A的N溝道增強型MOS場效應(yīng)管)
FQU9N15 150V N-Channel MOSFET(漏源電壓為150V、漏電流為7.0A的N溝道增強型MOS場效應(yīng)管)
FQD9N15 150V N-Channel MOSFET
FQU9N25 250V N-Channel MOSFET(漏源電壓為250V、漏電流為7.4A的N溝道增強型MOS場效應(yīng)管)
FQD9N25 250V N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQU9N08LTU 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQU9N08TU 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQU9N15 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:150V N-Channel MOSFET
FQU9N15TU 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQU9N25 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*