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參數(shù)資料
| 型號(hào)： | FS30KM-06 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH-SPEED SWITCHING USE |
| 中文描述： | 高速開(kāi)關(guān)使用 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | FS30KM-06 |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30KM-06
HIGH-SPEED SWITCHING USE
0
4
8
12
16
20
0
10
20
30
40
50
V
DS
= 10V
Tch = 25°C
I
D
= 30A
20V
40V
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
V
GS
= 0V
Pulse Test
T
C
= 125°C
75°C
25°C
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
G
G
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
S
S
CHANNEL TEMPERATURE Tch (°C)
D
D
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
G
V
G
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
T
t
(
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
D
D
CHANNEL TEMPERATURE Tch (°C)
D
(
D
(
0.4
0.6
0.8
1.0
1.2
1.4
–50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
0
1.0
2.0
3.0
4.0
5.0
–50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50
0
50
100
150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
–4
23 57
23 57
23 57
23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
P
DM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FS30KM2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | SOT-186 |
| FS30KM-2 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MITSUBISHI Nch POWER MOSFET |
| FS30KM3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 30A I(D) | SOT-186 |
| FS30KM-3 | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 150V 30A 3-Pin(3+Tab) TO-220FN |
| FS30KM-3-A8 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
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