參數(shù)資料
型號: GE28F008B3BA70
廠商: INTEL CORP
元件分類: PROM
英文描述: 1M X 8 FLASH 2.7V PROM, 70 ns, PBGA46
封裝: VFBGA-46
文件頁數(shù): 20/70頁
文件大?。?/td> 1215K
代理商: GE28F008B3BA70
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Datasheet
27
5.0
Pinout and Signal Descriptions
This section explains the package pinout and signal descriptions.
5.1
Signal Pinouts
The B3 flash memory device is available in 40-lead TSOP (x8, Figure 5), 48-lead TSOP (x16,
BGA(x8 and x16, Figure 8 and Figure 9, respectively), and 48-ball VF BGA
(x16, Figure 9) packages.
5.1.1
40-Lead and 48-Lead TSOP Packages
0580_01
NOTES:
1. 40-Lead TSOP available for 8-Mbit and 16-Mbit densities only.
2. Lower densities have NC on the upper address pins. For example, an 8-Mbit device will have NC on Pin 38.
Figure 5. 40-Lead TSOP Package for x8 Configurations
A
17
GND
A
20
A
19
A
10
DQ
7
DQ
6
DQ
5
DQ
4
V
CCQ
V
CC
NC
DQ
3
DQ
2
DQ
1
DQ
0
OE#
GND
CE#
A
0
A
16
A
15
A
14
A
13
A
12
A
11
A
9
A
8
WE#
RP#
V
PP
WP#
A
18
A
7
A
6
A
5
A
4
A
3
A
2
A
1
16 M
8 M
Advanced Boot Block
40-Lead TSOP
10 mm x 20 mm
TOP VIEW
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
4 M
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