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參數(shù)資料
| 型號(hào)： | GE28F008B3BA70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 1M X 8 FLASH 2.7V PROM, 70 ns, PBGA46 |
| 封裝： | VFBGA-46 |
| 文件頁(yè)數(shù)： | 29/70頁(yè) |
| 文件大?。?/td> | 1215K |
| 代理商： | GE28F008B3BA70 |
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28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Datasheet
35
7.0
Electrical Specifications
7.1
DC Current Characteristics
Table 11. DC Current Characteristics (Sheet 1 of 2)
Sym
Parameter
VCC
2.7 V–3.6 V
2.7 V–2.85 V
2.7 V–3.3 V
Unit
Test Conditions
VCCQ
2.7 V–3.6 V
1.65 V–2.5 V
1.8 V–2.5 V
Note
Typ
Max
Typ
Max
Typ
Max
ILI
Input Load Current
1,2
± 1
± 1A
VCC = VCCMax
VCCQ = VCCQMax
VIN = VCCQ or GND
ILO
Output Leakage Current
1,2
± 10
A
VCC = VCCMax
VCCQ = VCCQMax
VIN = VCCQ or GND
ICCS
VCC Standby Current for
0.13 and 0.18 Micron
Product
1
7
15
20
50
150
250
A
VCC = VCCMax
CE# = RP# = VCCQ
or during Program/ Erase
Suspend
WP# = VCCQ or GND
VCC Standby Current for
0.25 Micron Product
1
10
25
20
50
150
250
A
ICCD
VCC Power-Down Current
for 0.13 and 0.18 Micron
Product
1,2
7
15
7
20
7
20
A
VCC = VCCMax
VCCQ = VCCQMax
VIN = VCCQ or GND
RP# = GND ± 0.2 V
VCC Power-Down Current
for 0.25 Product
1,2
7
25
7
25
7
25
A
ICCR
VCC Read Current for
0.13 and 0.18 Micron
Product
1,2,3
9
18
8
15
9
15
mA
VCC = VCCMax
VCCQ = VCCQMax
OE# = VIH, CE# =VIL
f = 5 MHz, IOUT=0 mA
Inputs = VIL or VIH
VCC Read Current for
0.25 Micron Product
1,2,3
10
18
8
15
9
15
mA
IPPD
VPP Deep Power-Down
Current
1
0.2
5
0.2
5
0.2
5
A
RP# = GND ± 0.2 V
VPP ≤ VCC
ICCW
VCC Program Current
1,4
18
55
18
55
18
55
mA
VPP =VPP1,
Program in Progress
822
10
30
10
30
mA
VPP = VPP2 (12v)
Program in Progress
ICCE
VCC Erase Current
1,4
16
45
21
45
21
45
mA
VPP = VPP1,
Erase in Progress
815
16
45
16
45
mA
VPP = VPP2 (12v) ,
Erase in Progress
ICCES/
ICCWS
VCC Erase Suspend
Current for 0.13 and 0.18
Micron Product
1,4,5
7
15
50
200
50
200
A
CE# = VIH, Erase
Suspend in Progress
VCC Erase Suspend
Current for 0.25 Micron
Product
10
25
50
200
50
200
A
IPPR
VPP Read Current
1,4
2
±15
2
±15
2
±15
A
VPP ≤ VCC
50
200
50
200
50
200
A
VPP > VCC
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