參數(shù)資料
型號(hào)： GE28F008B3BA70
廠商： INTEL CORP
元件分類： PROM
英文描述： 1M X 8 FLASH 2.7V PROM, 70 ns, PBGA46
封裝： VFBGA-46
文件頁(yè)數(shù)： 58/70頁(yè)
文件大?。?/td> 1215K
代理商： GE28F008B3BA70
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Datasheet
61
For the bottom configuration, the bottom two parameter blocks (blocks #0 and #1 for 4 /8 /16 /
32/64 Mbit) are lockable. Unlocked blocks can be programmed or erased normally (unless
VPP is below VPPLK).
12.2
WP# = VIH for Block Unlocking
WP# = VIH unlocks all lockable blocks. These blocks can now be programmed or erased.
Note that RP# does not override WP# locking as in previous Boot Block devices. WP# controls all
block locking and VPP provides protection against spurious writes. Table 30 defines the write-
protection methods.
Table 30. Write-Protection Truth Table for the B3 Device Family
VPP
WP#
RP#
Write Protection Provided
XX
VIL
All Blocks Locked
VIL
XVIH
All Blocks Locked
≥ V
PPLK
VIL
VIH
Lockable Blocks Locked
≥ V
PPLK
VIH
All Blocks Unlocked
相關(guān)PDF資料
PDF描述
GE28F128W18BC60 8M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
GF-61-APC/90-L BOARD TERMINATED, FEMALE, RF CONNECTOR, SOLDER
GF-61-APC/90L BOARD TERMINATED, FEMALE, RF CONNECTOR, SOLDER, SOCKET
GF-61-APC-S BOARD TERMINATED, FEMALE, RF CONNECTOR, SOLDER
GF-61-APC/S BOARD TERMINATED, FEMALE, RF CONNECTOR, SOLDER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GE28F008B3BA90 制造商:Intel 功能描述:
GE28F008B3TA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F128J3A-110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
GE28F128J3A-115 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
GE28F128J3A-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
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