參數(shù)資料
型號: GE28F008B3BA70
廠商: INTEL CORP
元件分類: PROM
英文描述: 1M X 8 FLASH 2.7V PROM, 70 ns, PBGA46
封裝: VFBGA-46
文件頁數(shù): 62/70頁
文件大?。?/td> 1215K
代理商: GE28F008B3BA70
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Datasheet
65
Appendix B Program and Erase Flowcharts
0580_E1
Figure 15. Program Flowchart
Start
Write 40H
Program Address/Data
Read Status Register
SR.7 = 1?
Full Status
Check if Desired
Program Complete
Read Status Register
Data (See Above)
V
PP Range Error
Programming Error
Attempted Program to
Locked Block - Aborted
Program Successful
SR.3 =
SR.4 =
SR.1 =
FULL STATUS CHECK PROCEDURE
Bus Operation
Write
Standby
Repeat for subsequent programming operations.
SR Full Status Check can be done after each program or after a sequence of
program operations.
Write FFH after the last program operation to reset device to read array mode.
Bus Operation
Standby
SR.3 MUST be cleared, if set during a program attempt, before further
attempts are allowed by the Write State Machine.
SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,
in cases where multiple bytes are programmed before full status is checked.
If an error is detected, clear the status register before attempting retry or other
error recovery.
No
Yes
1
0
1
0
1
0
Command
Program Setup
Program
Comments
Data = 40H
Data = Data to Program
Addr = Location to Program
Check SR.7
1 = WSM Ready
0 = WSM Busy
Command
Comments
Check SR.3
1 = V
PP Low Detect
Check SR.1
1 = Attempted Program to
Locked Block - Program
Aborted
Read
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Standby
Check SR.4
1 = V
PP Program Error
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