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參數(shù)資料
| 型號(hào)： | GP1200ESM33 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Reliability Single Switch IGBT Module Advance Information |
| 中文描述： | 1200 A, 3300 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 150K |
| 代理商： | GP1200ESM33 |
GP1200ESM33
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
3/9
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
±
20V, V
CE
= 0V
I
C
= 120mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 1200A
V
GE
= 15V, I
C
= 1200A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 1200A
I
F
= 1200A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Units
mA
mA
μ
A
V
V
V
A
A
V
V
nF
nH
Max.
3
100
12
6.5
4.3
5
1200
2400
2.9
3
-
-
Typ.
-
-
-
5.5
3.4
4.3
-
-
2.3
2.4
300
10
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GP1200FSM18 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Hi-Reliability Single Switch IGBT Module |
| GP1200FSS12S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 1.2KA I(C) |
| GP1200FSS16S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV V(BR)CES | 1.2KA I(C) |
| GP1200FSS18 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Single Switch IGBT Module |
| GP1201FSS18 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Single Switch Low V IGBT Module |
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