參數(shù)資料
型號: GP1200FSS18
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 功率晶體管
英文描述: Single Switch IGBT Module
中文描述: 1200 A, 1800 V, N-CHANNEL IGBT
文件頁數(shù): 1/9頁
文件大?。?/td> 150K
代理商: GP1200FSS18
GP1200ESM33
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9
FEATURES
I
High Thermal Cycling Capability
I
Non Punch Through Silicon
I
Isolated MMC Base with AlN Substrates
APPLICATIONS
I
High Reliability Inverters
I
Motor Controllers
I
Traction Drives
I
Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP1200ESM33 is a single switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1200ESM33
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
V
CE(sat)
I
C
I
C(PK)
3300V
3.4V
1200A
2400A
(typ)
(max)
(max)
GP1200ESM33
High Reliability Single Switch IGBT Module
Advance Information
DS5308-2.1 February 2001
Replaces July 2000 version, DS5308-1.6
Fig. 1 Single switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code:
E
(See package details for further information)
C2
C1
Aux C
G
Aux E
E1
E2
E3
External connection
External connection
C3
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