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參數(shù)資料
| 型號(hào)： | GP1200FSS18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Single Switch IGBT Module |
| 中文描述： | 1200 A, 1800 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 150K |
| 代理商： | GP1200FSS18 |
GP1200ESM33
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/9
TYPICAL CHARACTERISTICS
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
Fig.5 Diode typical forward characteristics
Fig.6 Reverse bias safe operating area
0
1000
1200
1400
2000
2200
2400
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V
ce
- (V)
C
c
V
ge
= 20/15/12/10V
Common emitter
T
case
= 25
C
1800
1600
200
400
600
800
0
1000
1200
1400
2000
2200
2400
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Collector-emitter voltage, V
ce
- (V)
C
c
V
ge
= 20/15/12/10V
Common emitter
T
case
= 125
C
1800
1600
200
400
600
800
0
1.0
1000
1200
1400
400
200
600
800
1600
1800
2000
2200
2400
1.5
2.0
2.5
3.0
3.5
Foward voltage, V
F
- (V)
F
F
T
j
= 125
C
T
j
= 25
C
0
600
800
200
400
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
0
500
1000
Collector-emitter voltage, V
ce
- (V)
1500
2000
2500
3000
3500
C
C
T
case
= 125C
V
ge
= ±15V
R
g(OFF)
= 3.3
C
GE
= 660nF
dV
CE
/dt < 9000V/μs
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