參數(shù)資料
型號: HEF4052BP
廠商: NXP Semiconductors N.V.
元件分類: 開關
英文描述: Dual 4-channel analog multiplexer-demultiplexer
封裝: HEF4052BP<SOT38-4 (DIP16)|<<http://www.nxp.com/packages/SOT38-4.html<1<Always Pb-free,;HEF4052BT<SOT109-1 (SO16)|<<http://www.nxp.com/packages/SOT109-1.html<1<week
文件頁數(shù): 6/22頁
文件大?。?/td> 199K
代理商: HEF4052BP
HEF4052B_7
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 26 March 2010
6 of 22
NXP Semiconductors
HEF4052B
Dual 4-channel analog multiplexer/demultiplexer
7. Functional description
7.1 Function table
[1]
H = HIGH voltage level;
L = LOW voltage level;
X = don’t care.
8. Limiting values
[1]
To avoid drawing V
DD
current out of terminal Z, when switch current flows into terminals Y, the voltage drop across the bidirectional
switch must not exceed 0.4 V. If the switch current flows into terminal Z, no V
DD
current will flow out of terminals Y, and in this case there
is no limit for the voltage drop across the switch, but the voltages at Y and Z may not exceed V
DD
or V
EE
.
For DIP16 package: P
tot
derates linearly with 12 mW/K above 70
°
C.
For SO16 package: P
tot
derates linearly with 8 mW/K above 70
°
C.
For SSOP16 package: P
tot
derates linearly with 5.5 mW/K above 60
°
C.
[2]
Table 3.
Input
E
L
L
L
L
H
Function table
[1]
Channel on
S2
L
L
H
H
X
S1
L
H
L
H
X
nY0 to nZ
nY1 to nZ
nY2 to nZ
nY3 to nZ
switches off
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to V
SS
= 0 V (ground).
Symbol
Parameter
Conditions
V
DD
supply voltage
V
EE
supply voltage
referenced to V
DD
I
IK
input clamping current
pins Sn and E;
V
I
<
0.5 V or V
I
> V
DD
+ 0.5 V
V
I
input voltage
I
I/O
input/output current
I
DD
supply current
T
stg
storage temperature
T
amb
ambient temperature
P
tot
total power dissipation
T
amb
=
40
°
C to +125
°
C
DIP16 package
SO16 package
TSSOP16 package
P
power dissipation
per output
Limiting values
Min
0.5
Max
+18
+0.5
±
10
Unit
V
V
mA
[1]
18
-
0.5
-
-
65
40
V
DD
+ 0.5
±
10
50
+150
+125
V
mA
mA
°
C
°
C
[2]
-
-
-
-
750
500
500
100
mW
mW
mW
mW
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