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參數(shù)資料
| 型號(hào)： | HFA3128 |
| 廠商： | Intersil Corporation |
| 英文描述： | XC95216-20PQ160I - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 超高頻晶體管陣列 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | HFA3128 |
3-449
Base-to-Emitter Capacitance
V
BE
= -3V
-
200
-
-
500
-
fF
Collector-to-Base Capacitance
V
CB
= 3V
-
200
-
-
500
-
fF
Electrical Specifications
T
A
= 25
o
C
(Continued)
PARAMETER
TEST CONDITIONS
DIE
SOIC
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
Electrical Specifications
T
A
= 25
o
C
PARAMETER
TEST CONDITIONS
DIE
SOIC
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
DC PNP CHARACTERISTICS
Collector-to-Base Breakdown
Voltage, V
(BR)CBO
I
C
= -100
μ
A, I
E
= 0
10
15
-
10
15
-
V
Collector-to-Emitter Breakdown
Voltage, V
(BR)CEO
I
C
= -100
μ
A, I
B
= 0
8
15
-
8
15
-
V
Collector-to-Emitter Breakdown
Voltage, V
(BR)CES
I
C
= -100
μ
A, Base Shorted to Emitter
10
15
-
10
15
-
V
Emitter-to-Base Breakdown
Voltage, V
(BR)EBO
I
E
= -10
μ
A, I
C
= 0
4.5
5
-
4.5
5
-
V
Collector-Cutoff-Current, I
CEO
V
CE
= -6V, I
B
= 0
-
2
100
-
2
100
nA
Collector-Cutoff-Current, I
CBO
V
CB
= -8V, I
E
= 0
-
0.1
10
-
0.1
10
nA
Collector-to-Emitter Saturation
Voltage, V
CE(SAT)
I
C
= -10mA, I
B
= -1mA
-
0.3
0.5
-
0.3
0.5
V
Base-to-Emitter Voltage, V
BE
I
C
= -10mA
-
0.85
0.95
-
0.85
0.95
V
DC Forward-Current Transfer
Ratio, h
FE
I
C
= -10mA, V
CE
= -2V
20
60
-
20
60
-
Early Voltage, V
A
I
C
= -1mA, V
CE
= -3.5V
10
20
-
10
20
-
V
Base-to-Emitter Voltage Drift
I
C
= -10mA
-
-1.5
-
-
-1.5
-
mV/
o
C
Collector-to-Collector Leakage
-
1
-
-
1
-
pA
Electrical Specifications
T
A
= 25
o
C
PARAMETER
TEST CONDITIONS
DIE
SOIC
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
DYNAMIC PNP CHARACTERISTICS
Noise Figure
f = 1.0GHz, V
CE
= -5V,
I
C
= -5mA, Z
S
= 50
-
3.5
-
-
3.5
-
dB
f
T
Current Gain-Bandwidth
Product
I
C
= -1mA, V
CE
= -5V
-
2
-
-
2
-
GHz
I
C
= -10mA, V
CE
= -5V
-
5.5
-
-
5.5
-
GHz
Power Gain-Bandwidth
Product
I
C
= -10mA, V
CE
= -5V
-
3
-
-
2
-
GHz
Base-to-Emitter Capacitance
V
BE
= 3V
-
200
-
-
500
-
fF
Collector-to-Base Capacitance
V
CB
= -3V
-
300
-
-
600
-
fF
HFA3046, HFA3096, HFA3127, HFA3128
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HFA3128B | 功能描述:IC TRANSISTOR ARRAY PNP 16-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| HFA3128B96 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HFA3128BZ | 功能描述:射頻雙極小信號(hào)晶體管 W/ANNEAL TXARRAY 5X PNP 16N MIL RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| HFA3128BZ | 制造商:Intersil Corporation 功能描述:TRANSISTOR ARRAY |
| HFA3128BZ | 制造商:Intersil Corporation 功能描述:IC TRANSISTOR ARRAY ULTRA H FREQ 制造商:Intersil Corporation 功能描述:IC TRANSISTOR ARRAY, ULTRA H FREQ |
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