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參數(shù)資料
| 型號： | HFA3926IA96 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 衰減器 |
| 英文描述： | 2.0GHz - 2.7GHz 250mW Power Amplifier |
| 中文描述： | 2000 MHz - 2700 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SSOP, 28PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 69K |
| 代理商： | HFA3926IA96 |
2-230
Pin Description
PINS
SYMBOL
DESCRIPTION
1
GND
DC and RF Ground.
2
GND
DC and RF Ground.
3
GND
DC and RF Ground.
4
GND
DC and RF Ground.
5
GND
DC and RF Ground.
6
GND
DC and RF Ground.
7
GND
DC and RF Ground.
8
No connect.
9
V
G2
Negative bias control for the second PA stage, adjusted to set V
DD2
quiescent bias current, which is typically
53mA. Typical voltage at pin = -0.75V. Input impedance: > 1M
.
10
GND
DC and RF Ground.
11
V
DD1
Positive bias for the first stage of the PA, 2.7V to 6V.
12
GND
DC and RF Ground.
13
GND
DC and RF Ground.
14
V
G1
Negative bias control for the first PA stage, adjusted to set V
DD1
quiescent bias current, which is typically
20mA. Typical voltage at pin = -0.75V. Input impedance: > 1M
.
15
RF IN
RF Input of the Power Amplifier.
16S
GND
DC and RF Ground.
17
V
G3
Negative bias control for the third PA stage, adjusted to set V
DD3
quiescent bias current, which is typically
90mA. Typical voltage at pin = -0.95V. Input impedance: > 1M
.
18
V
DD2
Positive bias for the second stage of the PA. 2.7V to 6V.
19-22
GND
DC and RF Ground.
23
V
DD3
Positive bias for the third stage of the PA. 2.7V to 6V.
24
GND
DC and RF Ground.
25
RF OUT
RF output of power amplifier.
26
GND
DC and RF Ground.
27
V
DD
V
DD
.
28
GND
DC and RF Ground.
NOTE: Process variation will effect V
G3
voltage requirement to develop 90mA stage 3 quiescent current, maximum range = -0.69V to -1.04V.
HFA3926
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