參數(shù)資料
型號(hào)： HGT1S12N60C3S9A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
中文描述： 24 A, 600 V, N-CHANNEL IGBT, TO-263AB
文件頁(yè)數(shù)： 3/7頁(yè)
文件大小： 172K
代理商： HGT1S12N60C3S9A
2001 Fairchild Semiconductor Corporation
HGTP12N60C3, HGT1S12N60C3S Rev. B
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
4
6
8
10
12
0
10
20
40
50
60
70
14
30
80
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -40
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
0
0
2
4
6
8
10
10
20
30
12.0V
8.5V
9.0V
8.0V
7.5V
7.0V
V
GE
= 15.0V
40
50
60
70
80
10.0V
I
C
,
0
30
0
1
2
3
4
5
40
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
10
20
50
70
80
60
I
C
,
0
30
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
10
20
40
50
60
70
80
25
50
75
100
125
150
0
5
10
15
20
25
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
I
S
,
20
60
80
120
t
S
,
μ
s
10
11
V
GE
, GATE TO EMITTER VOLTAGE (V)
12
14
15
13
140
100
40
I
SC
t
SC
5
10
15
20
V
CE
= 360V, R
G
= 25
, T
J
= 125
o
C
HGTP12N60C3, HGT1S12N60C3S
相關(guān)PDF資料
PDF描述
HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
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HGTP1N120BND 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）)
HGT1S20N60A4S9A 600V, SMPS Series N-Channel IGBTsnull
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S12N60C3S9AR4501 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGT1S14N36G3VL 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGT1S14N36G3VLS 功能描述:IGBT 晶體管 Coil Dr 14A 360V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S14N36G3VLS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 390V V(BR)CES | 18A I(C) | TO-263AB
HGT1S14N36G3VLT 功能描述:IGBT 晶體管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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