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參數(shù)資料
| 型號： | HGT1S1N120CNDS |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6.2A, 1200V, NPT Series N-Channel IGBT(6.2A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| 中文描述： | 6.2 A, 1200 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 80K |
| 代理商： | HGT1S1N120CNDS |
3
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
V
EC
t
rr
R
θ
JC
IGBT and Diode at T
J
= 150
o
C,
I
CE
= 1.0 A, V
CE
= 0.8 BV
CES,
V
GE
= 15V, R
G
= 82
,
L = 4mH,
Test Circuit (Figure 20)
-
13
20
ns
Current Rise Time
-
11
18
ns
Current Turn-Off Delay Time
-
75
100
ns
Current Fall Time
-
465
625
ns
Turn-On Energy (Note 3)
-
385
460
J
Turn-Off Energy (Note 3)
-
200
225
J
Diode Forward Voltage
I
EC
= 1A
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
IGBT
-
1.3
1.8
V
Diode Reverse Recovery Time
-
-
50
ns
Thermal Resistance Junction To Case
-
-
2.1
o
C/W
o
C/W
Diode
-
-
3
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-on losses include losses due to
diode recovery.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
4
5
1
25
75
100
125
150
3
2
6
7
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
3
0
I
C
,
1
2
600
800
400
200
1000
1200
0
4
6
5
7
T
J
= 150
o
C, R
G
= 82
, V
GE
= 15V, L = 2mH
0.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
10
2.0
1.0
100
3.0
200
300
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
R
θ
JC
= 2.1
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
J
= 150
o
C, R
G
= 82
, L = 4mH, V
CE
= 960V
T
C
V
GE
15V
110
o
C 13V
15V
75
o
75
o
C
110
o
C
f
M
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
13
14
15
10
12
14
16
18
20
10
12
14
16
18
20
V
CE
= 840V, R
G
= 82
, T
J
= 125
o
C
t
SC
I
SC
HGTP1N120CND, HGT1S1N120CNDS
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參數(shù)描述 |
|---|---|
| HGT1S1N120CNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB |
| HGT1S20N35F3VLR4505 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| HGT1S20N35G3VLS | 功能描述:IGBT 晶體管 Coil Dr 20A 350V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S20N35G3VLS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB |
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