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參數(shù)資料
| 型號： | HGT1S20N60C3RS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 40A, 600V, Rugged UFS Series N-Channel IGBTs |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 107K |
| 代理商： | HGT1S20N60C3RS |
5-4
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES
600
UNITS
V
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Fig. 12 . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 440V, T
J
= 150
o
C, R
GE
= 10
.
40
20
80
±
20
±
30
A
A
A
V
V
80A at 600V
164
1.32
100
-40 to 150
260
10
W
W/
o
C
mJ
o
C
o
C
μ
s
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown Voltage
BV
CES
BV
ECS
I
CES
I
C
= 250
μ
A, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= BV
CES
V
CE
= BV
CES
I
C
= I
C110
,
V
GE
= 15V
600
-
-
V
Emitter-Collector Breakdown Voltage
15
-
-
V
Collector-Emitter Leakage Current
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
-
-
250
μ
A
-
-
3.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
-
1.8
2.2
V
-
2.1
2.5
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A,
V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C
R
G
= 10
V
GE
= 15V
I
C
= I
C110
, V
CE
= 0.5 BV
CES
I
C
= I
C110
,
V
CE
= 0.5 BV
ES
3.5
6.3
7.5
V
Gate-Emitter Leakage Current
I
GES
SSOA
-
-
±
100
nA
Switching SOA (See Figure 12)
V
CE(PK)
= 600V
L = 1mH
80
-
-
A
Gate-Emitter Plateau Voltage
V
GEP
Q
G(ON)
-
9.0
-
V
On-State Gate Charge
V
GE
= 15V
V
GE
= 20V
-
87
110
nC
-
116
150
nC
Current Turn-On Delay Time
t
D(ON)I
t
RI
t
D(OFF)I
t
FI
dV
CE
/dt
dV
CE
/dt
E
ON
E
OFF
R
θ
JC
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 1mH
Diode used in test circuit
RURP1560 at 150
o
C
-
34
-
ns
Current Rise Time
-
40
-
ns
Current Turn-Off Delay Time
-
390
500
ns
Current Fall Time
-
330
400
ns
Turn-Off Voltage dv/dt (Note 3)
-
1.3
-
V/ns
Turn-On Voltage dv/dt (Note 3)
-
7.0
-
V/ns
Turn-On Energy (Note 4)
-
2.3
-
mJ
Turn-Off Energy (Note 5)
-
3.0
-
mJ
o
C/W
Thermal Resistance
-
-
0.76
NOTES:
3. dV
CE
/dt depends on the diode used and the temperature of the diode.
4. Turn-On Energy Loss (E
ON
) includes diode losses and is defined as the integral of the instantaneous power loss starting at the leading
edge of the input pulse and ending at the point where the collector voltage equals V
CE(ON)
. This value of E
ON
was obtained with a
RURP1560 diode at T
J
= 150
o
C. A different diode or temperature will result in a different E
ON
. For example with diode at T
J
= 25
o
C E
ON
is about one half the value at 150
o
C.
5. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S20N60C3S | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:45A, 600V, UFS Series N-Channel IGBT |
| HGT1S20N60C3S9A | 功能描述:IGBT 晶體管 45a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S2N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S2N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.6A I(C) | TO-263AB |
| HGT1S2N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
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