型號(hào): | HGT1S20N60C3S |
廠商: | INTERSIL CORP |
元件分類: | 功率晶體管 |
英文描述: | XC9536-7PC44C - NOT RECOMMENDED for NEW DESIGN |
中文描述: | 45 A, 600 V, N-CHANNEL IGBT, TO-263AB |
文件頁(yè)數(shù): | 6/8頁(yè) |
文件大?。?/td> | 144K |
代理商: | HGT1S20N60C3S |
相關(guān)PDF資料 |
PDF描述 |
---|---|
HGT1S20N60C3S9A | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 |
HGT1S2N120BNDS | 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(12A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管) |
HGT1S2N120CN | 13A, 1200V, NPT Series N-Channel IGBT |
HGT1S2N120BNS | XC9536-7PC44I - NOT RECOMMENDED for NEW DESIGN |
HGT1S2N120CNS | XC9536-7VQ44C - NOT RECOMMENDED for NEW DESIGN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
---|---|
HGT1S20N60C3S9A | 功能描述:IGBT 晶體管 45a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
HGT1S2N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
HGT1S2N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.6A I(C) | TO-263AB |
HGT1S2N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
HGT1S2N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-263AB |