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參數資料
| 型號： | HGT1S2N120CNS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 13A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 13 A, 1200 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數： | 6/9頁 |
| 文件大?。?/td> | 498K |
| 代理商： | HGT1S2N120CNS |
6
www.fairchildsemi.com
HGTP2N120CN, HGT1S2N120CN Rev. C
H
Typical Performance Characteristics
(Continued)
Figure 13. Transfer Characteristic
Figure 14. Gate Charage Waveforms
Figure 15. Capacitance vs Collector to Emitter
Figure 16. Collector to Emitter On-Sate Voltage
Figure 17. Normalized Transient Thermal Response, Junction to Case
I
C
,
0
5
10
15
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
20
25
30
14
15
35
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
40
250
μ
S PULSE TEST
DUTY CYCLE <0.5%, V
CE
= 20V
V
G
,
Q
G
, GATE CHARGE (nC)
14
16
30
25
20
10
12
15
10
5
0
8
6
4
2
0
V
CE
= 1200V
V
CE
= 400V
V
CE
= 800V
I
G(REF)
= 1mA, R
L
= 260
, T
C
= 25
o
C
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
0.5
C
IES
C
OES
1.0
C
RES
FREQUENCY = 1MHz
C
1.5
2.0
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1
2
3
4
5
V
GE
= 10V
V
GE
= 15V
DUTY CYCLE <0.5%, T
C
= 110
o
C
250
μ
s PULSE TEST
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
t
1
t
2
P
D
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HGT1S2N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 13A I(C) | TO-263AB |
| HGT1S3N60A4DS | 功能描述:IGBT 晶體管 TO-263 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S3N60A4DS9A | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S3N60A4S | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:600V, SMPS Series N-Channel IGBT |
| HGT1S3N60A4S9A | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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