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參數(shù)資料
| 型號： | HGTD6N50E1 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6A, 400V and 500V N-Channel IGBTs |
| 中文描述： | 7.5 A, 500 V, N-CHANNEL IGBT, TO-251AA |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 32K |
| 代理商： | HGTD6N50E1 |
1972
HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S
FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT (TYPICAL)
FIGURE 4. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE (TYPICAL)
FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER
CURRENT (TYPICAL)
FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT
(TYPICAL)
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT (TYPICAL)
Typical Performance Curves
(Continued)
5
4
3
2
1
V
C
,
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C
V
GE
= 10V
V
GE
= 15V
0
12
10
8
6
4
2
0
I
C
,
+25
+50
+75
+100
+125
+150
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 10V
V
GE
= 15V
500
400
300
200
100
0
C
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 1MHz
CISS
COSS
CRSS
0.3
0.2
0.1
0.0
t
D
,
μ
s
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
+150
o
C, V
GE
= 15V, R
G
= 50
,
V
CE
= 400V, L = 50
μ
H
1.5
1.0
0.0
t
F
,
μ
s
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, V
GE
= 10V
R
G
= 25
, L = 50
μ
H
V
CE
= 400V
0.5
10
1.0
0.1
W
O
,
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, V
GE
= 10V
R
G
= 25
, L = 50
μ
H
V
CE
= 400V
V
CE
= 200V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD6N50E1S | 制造商:Rochester Electronics LLC 功能描述: |
| HGTD7N60A4S | 功能描述:IGBT 晶體管 TO-252 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD7N60A4S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 34A I(C) | TO-252AA |
| HGTD7N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD7N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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