參數(shù)資料
型號： HGTP11N120CN
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk
中文描述： 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 1/7頁
文件大?。?/td> 138K
代理商： HGTP11N120CN
2001 Fairchild Semiconductor Corporation
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B
HGTG11N120CN, HGTP11N120CN,
HGT1S11N120CNS
43A, 1200V, NPT Series N-Channel IGBT
The HGTG11N120CN, HGTP11N120CN, and
HGT1S11N120CNS are
N
on-
P
unch
T
hrough (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49291.
Symbol
Features
43A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 340ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
Thermal Impedance
SPICE Model
Temperature Compensating
SABER Model
www.fairchildsemi.com
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG11N120CN
TO-247
G11N120CN
HGTP11N120CN
TO-220AB
11N120CN
HGT1S11N120CNS
TO-263AB
11N120CN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S11N120CNS9A.
C
E
G
G
C
E
COLLECTOR
(BOTTOM SIDE
METAL)
G
COLLECTOR
(FLANGE)
E
C
G
COLLECTOR
(FLANGE)
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,598,461
4,605,948
4,620,211
4,631,564
4,682,195
4,684,413
4,694,313
4,717,679
4,803,533
4,809,045
4,809,047
4,810,665
4,888,627
4,890,143
4,901,127
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
Data Sheet
December 2001
相關(guān)PDF資料
PDF描述
HGT1S11N120CNS9A TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 22A I(C) | TO-263AB
HGT1S11N120CNS 43A, 1200V, NPT Series N-Channel IGBT
HGTP12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP12N6001 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP12N60A4 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTP12N60A4D 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTP12N60A4D 制造商:Intersil Corporation 功能描述:IGBT TO-220
HGTP12N60B3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:27A, 600V, UFS Series N-Channel IGBTs
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