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參數(shù)資料
| 型號(hào)： | HGTP14N36G3VL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | DIODE ZENER SINGLE 500mW 30Vz 4.2mA-Izt 0.05 0.1uA-Ir 23Vr DO35-GLASS 5K/REEL |
| 中文描述： | 18 A, N-CHANNEL IGBT, TO-220AB |
| 封裝： | LEAD FREE, TO-220AB, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 224K |
| 代理商： | HGTP14N36G3VL |
2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
EMITTER
GATE
COLLECTOR
(FLANGE)
EMITTER
GATE
R
2
R
1
COLLECTOR
Features
Logic Level Gate Drive
Internal Voltage Clamp
ESD Gate Protection
T
J
= 175
o
C
Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt
resister are provided in the gate circuit.
The development type number for this device is TA49021.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP14N36G3VL
TO-220AB
14N36GVL
HGT1S14N36G3VL
TO-262AA
14N36GVL
HGT1S14N36G3VLS
TO-263AB
14N36GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.
December 2001
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
390
24
18
14
±
10
17
12
332
100
0.67
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/
o
C
o
C
o
C
KV
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CER
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
Collector Current Continuous at V
GE
= 5V, T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . I
C25
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Inductive Switching Current at L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . I
SCIS
at L = 2.3mH, T
C
= + 175
o
C . . . . . . . . . . . . . . . . . . . . . . I
SCIS
Collector to Emitter Avalanche Energy at L = 2.3mH, T
C
= +25
o
C. . . . . . . . . . . . . . . E
AS
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Electrostatic Voltage at 100pF, 1500
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
at V
GE
= 5V, T
C
= +100
o
C. . . . . . . . . . . . . . . . . . . . . .I
C100
NOTE: May be exceeded if I
GEM
is limited to 10mA.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S14N36G3VL | 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGT1S14N36G3VLS | DIODE ZENER SINGLE 500mW 39Vz 3.2mA-Izt 0.05 0.1uA-Ir 32Vr DO35-GLASS 5K/AMMO |
| HGTP14N37G3VL | TRANSISTOR PNP BIPOLAR 45V SOT23 |
| HGT1S14N37G3VLS9A | TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB |
| HGT1S14N37G3VLS | TRANS PNP BIPOLAR 45V SOT323 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP14N37G3VL | 功能描述:IGBT 晶體管 14A 370V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP14N40F3VL | 功能描述:IGBT 晶體管 400V/14A/TF<1.2US RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP14N41G3VL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB |
| HGTP14N41G3VLS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGTP14N44G3VL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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