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參數(shù)資料
| 型號： | HGTP14N37G3VL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR PNP BIPOLAR 45V SOT23 |
| 中文描述： | 25 A, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 159K |
| 代理商： | HGTP14N37G3VL |
2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B
FIGURE 11. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 13. LEAKAGE CURRENT vs JUNCTION
TEMPERATURE
FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
8
4
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
16
24
12
50
25
75
100
125
150
20
28
0
175
V
GE
= 5V
V
G
,
0.8
1.2
1.6
1.0
1.4
1.8
2.0
-50
25
100
175
T
J
, JUNCTION TEMPERATURE (
o
C)
I
CE
= 1mA
V
CE
= V
GE
L
μ
A
0.1
10
100
25
50
75
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
125
1000
10000
1
175
V
ECS
= 24V
V
CES
= 300V
V
CES
= 250V
μ
s
T
J
, JUNCTION TEMPERATURE (
o
C)
2
14
4
10
6
8
12
16
25
50
75
100
150
125
175
RESISTIVE t
OFF
INDUCTIVE t
OFF
RESISTIVE t
ON
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1k
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
5
10
15
20
25
0
800
1600
2000
1200
2400
400
FREQUENCY = 1MHz
C
RES
C
OES
C
IES
0
16
40
Q
G
, GATE CHARGE (nC)
4
0
56
V
G
,
8
8
24
32
48
2
6
I
G(REF)
= 1mA, R
L
= 1.865
, T
J
= 25
o
C
V
CE
= 12V
V
CE
= 6V
HGT1S14N37G3VLS, HGTP14N37G3VL
相關(guān)PDF資料 |
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|---|---|
| HGT1S14N37G3VLS9A | TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB |
| HGT1S14N37G3VLS | TRANS PNP BIPOLAR 45V SOT323 |
| HGTP14N40F3VL | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| HGTP14N40F3VL | 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT |
| HGT1S14N40F3VLS | 330mJ, 400V, N-Channel Ignition IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP14N40F3VL | 功能描述:IGBT 晶體管 400V/14A/TF<1.2US RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP14N41G3VL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB |
| HGTP14N41G3VLS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGTP14N44G3VL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP15N120C3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:35A, 1200V, UFS Series N-Channel IGBTs |
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