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參數(shù)資料
| 型號： | HGTP14N40F3VL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 38 A, 420 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 147K |
| 代理商： | HGTP14N40F3VL |
2002 Fairchild Semiconductor Corporation
January 2002
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
H
HGTP14N40F3VL / HGT1S14N40F3VLS
330mJ
,
400V, N-Channel
Ignition IGBT
General Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in au-
tomotive ignition circuits. Unique features include an active
voltage clamp between the drain and the gate and ESD pro-
tection for the logic level gate. Some specifications are
unique to this automotive application and are intended to
assure device survival in this harsh environment.
Formerly Developmental Type 49023
Applications
Automotive Ignition Coil Driver Circuits
Coil-On Plug Applications
Features
Logic Level Gate Drive
Internal Voltage Clamp
ESD Gate Protection
Max T
J
= 175
o
C
SCIS Energy = 330mJ at T
J
= 25
o
C
Device Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
BV
CES
BV
CGR
E
SCIS25
I
C25
I
C90
V
GES
V
GEM
I
CO
I
CO
P
D
Parameter
Ratings
420
420
330
38
35
±10
±12
17
12
262
1.75
-40 to 175
300
260
6
Units
V
V
mJ
A
A
V
V
A
A
W
W/°C
°C
°C
°C
KV
Collector to Emitter Breakdown Voltage (I
C
= 1 mA)
Collector to Gate Breakdown Voltage (R
GE
= 10K
)
Drain to Source Avalanche Energy at L = 2.3mHy, T
C
= 25°C
Collector Current Continuous, at T
C
= 25°C, V
GE
= 4.5V
Collector Current Continuous, at T
C
= 90°C, V
GE
= 4.5V
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
L = 2.3mHy, T
C
= 25°C
L = 2.3mHy, T
C
= 150°C
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating and Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
T
J,
T
STG
T
L
T
pkg
ESD
Package
JEDEC TO-263AB
D2 -Pak
COLLECTOR
(FLANGE)
GATE
COLLECTOR
EMITTER
R
1
Symbol
COLLECTOR
(FLANGE)
G
C
E
JEDEC TO-220AB
E
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP14N40F3VL | 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT |
| HGT1S14N40F3VLS | 330mJ, 400V, N-Channel Ignition IGBT |
| HGTP14N41G3VLS | 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGTP1N120BN | 5.3A, 1200V, NPT Series N-Channel IGBT |
| HGTP1N120CND | 6.2A, 1200V, NPT Series N-Channel IGBT(6.2A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP14N41G3VL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB |
| HGTP14N41G3VLS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGTP14N44G3VL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP15N120C3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:35A, 1200V, UFS Series N-Channel IGBTs |
| HGTP15N40C1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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