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參數(shù)資料
| 型號： | HGTP14N40F3VL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 38 A, 420 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 147K |
| 代理商： | HGTP14N40F3VL |
2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
H
Test Circuit and Waveforms
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
Figure 15. Breakdown Voltage vs Series Gate Resistance
Figure 16. Normalized Transient Thermal Impedance
C
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1000
500
250
750
0
10
5
15
20
25
0
C
IES
C
OES
C
RES
FREQUENCY = 1 MHz
1500
1250
Q
G
, GATE CHARGE (nC)
V
G
,
0
2
4
8
0
5
10
15
20
25
30
6
I
G(REF)
= 1mA, R
L
= 1.25
,
T
J
= 25
°
C
V
CE
= 6V
V
CE
= 12V
B
C
,
R
G
, SERIES GATE RESISTANCE (k
)
380
365
370
10
5000
1000
10000
355
100
375
360
T
J
= - 40
°
C
T
J
= 25
°
C
T
J
= 175
°
C
I
CER
= 10mA
Z
t
,
T
1
, RECTANGULAR PULSE DURATION (s)
10
0
10
-2
10
-1
10
-1
10
-2
10
-3
10
-4
10
0
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
t
2
P
D
10
-5
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10
-3
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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