參數資料
型號： HGTP1N120BND
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）)
中文描述： 1 A, 1200 V, N-CHANNEL IGBT, TO-220AB
文件頁數： 6/7頁
文件大?。?/td> 75K
代理商： HGTP1N120BND
6
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
0.005
0.01
1.0
10
-3
10
-2
10
-1
10
0
10
-4
10
-5
2.0
0.1
t
1
t
2
P
D
SINGLE PULSE
0.1
0.5
0.05
0.01
0.02
0.2
1
2
J
D
θ
θ
C
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
I
E
,
1
0.1
0.5
2
5
V
EC
, FORWARD VOLTAGE (V)
0.4
0
0.8
1.2
1.6
2.0
0.2
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
t
40
0
10
60
70
I
EC
, FORWARD CURRENT (A)
5
4
3
2
1
0.5
20
50
30
T
C
= 25
o
C, dI
EC
/dt = 200A/
μ
s
t
rr
t
a
t
b
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
R
G
= 82
L = 4mH
V
DD
= 960V
+
-
RHRD4120
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
I
CE
HGTP1N120BND, HGT1S1N120BNDS
相關PDF資料
PDF描述
HGT1S20N60A4S9A 600V, SMPS Series N-Channel IGBTsnull
HGT1S20N60B3S XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
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HGTG20N60B3 40A, 600V, UFS Series N-Channel IGBTs(40A, 600V，N溝道絕緣柵雙極晶體管)
HGT1S20N60C3R XC9536-7CS48C - NOT RECOMMENDED for NEW DESIGN
相關代理商/技術參數
參數描述
HGTP1N120CN 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT
HGTP1N120CND 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP20N35F3ULR3935 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTP20N35F3VL 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP20N35G3VL 功能描述:IGBT 晶體管 Coil Dri 20A 350V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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