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參數資料
| 型號： | HGTP20N60C3R |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 40A, 600V, Rugged UFS Series N-Channel IGBTs |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT |
| 文件頁數： | 4/6頁 |
| 文件大?。?/td> | 107K |
| 代理商： | HGTP20N60C3R |
5-6
FIGURE 7. TURN ON RISE TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 8. TURN OFF FALL TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 9. TURN ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 10. TURN OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 11. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 12. SWITCHING SAFE OPERATING AREA
Typical Performance Curves
(Continued)
t
R
,
I
CE
, COLLECTOR-EMITTER CURRENT (A)
5
10
20
25
35
20
40
60
80
40
0
120
15
30
100
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 480V,
V
GE
= 15V
I
CE
, COLLECTOR EMITTER CURRENT (A)
t
F
,
250
15
20
25
30
35
40
275
300
325
350
375
400
425
450
5
10
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 480V, V
GE
= 15V
I
CE
, COLLECTOR EMITTER CURRENT (A)
E
O
,
30
40
20
15
5
1.0
2.0
3.0
10
25
35
4.0
5.0
6.0
0
T
J
= 150
o
C, R
G
= 10
, L = 1mH,
V
CE(PK)
= 480V, V
GE
= 15V
I
CE
, COLLECTOR EMITTER CURRENT (A)
E
O
,
5
10
15
20
25
30
35
40
1.5
2.5
3.5
4.5
5.5
6.5
0.5
T
J
= 150
o
C, R
G
= 10
, L = 1mH,
V
CE(PK)
= 480V, V
GE
= 15V
I
CE
, COLLECTOR EMITTER CURRENT (A)
f
M
,
30
40
20
10
5
1
10
30
20
100
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 0.76
o
C/W
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 480V
T
C
= 75
o
C, V
GE
= 15V
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 1mH
0
20
40
60
80
100
0
100
200
300
400
500
600
700
PARTS MAY CURRENT LIMIT IN THIS REGION.
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
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| HGTG20N60C3R | 40A, 600V, Rugged UFS Series N-Channel IGBTs |
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| HGT1S20N60C3S | XC9536-7PC44C - NOT RECOMMENDED for NEW DESIGN |
| HGT1S20N60C3S9A | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 |
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相關代理商/技術參數 |
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| HGTP2N120BN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGTP2N120BND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP2N120CN | 功能描述:IGBT 晶體管 2.6A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP2N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGTP2N120CNS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
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