參數(shù)資料
型號(hào)： HGTP2N120CN
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： 13A, 1200V, NPT Series N-Channel IGBT
中文描述： 13 A, 1200 V, N-CHANNEL IGBT, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 5/9頁(yè)
文件大?。?/td> 498K
代理商： HGTP2N120CN
5
www.fairchildsemi.com
HGTP2N120CN, HGT1S2N120CN Rev. C
H
Typical Performance Characteristics
(Continued)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn_On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
E
O
,
μ
J
1500
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1000
500
2.5
1.5
3.5
3.0
2.0
1.0
4.0
4.5
5.0
2000
0
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
3.0
2.0
1.5
2.5
3.5
1.0
300
200
400
500
4.5
4.0
600
700
800
900
5.0
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
1.5
1.0
2.0
3.0
20
30
2.5
3.5
4.5
4.0
5.0
40
35
25
15
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
45
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
10
15
40
20
2.0
1.0
30
1.5
3.5
3.0
2.5
25
5.0
4.5
4.0
35
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
5
5.0
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
400
350
300
250
200
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
150
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
R
G
= 51
, L = 5mH, V
CE
= 960V
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
500
300
700
400
600
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T
J
= 150
o
C, V
GE
= 12V OR 15V
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
200
100
相關(guān)PDF資料
PDF描述
HGTP2N120CNS 13A, 1200V, NPT Series N-Channel IGBT
HGT1S5N120BNS XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN
HGT1S5N120CNS 25A, 1200V, NPT Series N-Channel IGBT
HGT1S5N120CNDS 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP2N120CND 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP2N120CNS 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:13A, 1200V, NPT Series N-Channel IGBT
HGTP3N60A4 功能描述:IGBT 晶體管 600V N-Channel IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTP3N60A4_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HGTP3N60A4D 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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