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參數(shù)資料
| 型號： | HGTP2N120CND |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 13A, 1200V, NPT Series N-Channel IGBTs(13A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 13 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 92K |
| 代理商： | HGTP2N120CND |
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
1
2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
4
3
4
5
10
8
6
T
C
= 25
o
C
T
C
= 150
o
C
250
μ
s PULSE TEST
DUTY CYCLE <0.5%, V
GE
= 12V
T
C
= -55
o
C
6
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2
4
6
0
1
2
3
4
5
8
0
10
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
250
μ
s PULSE TEST
E
O
,
μ
J
1500
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1000
500
2.5
1.5
3.5
3.0
2.0
1.0
4.0
4.5
5.0
2000
0
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
3.0
2.0
1.5
2.5
3.5
1.0
300
200
400
500
4.5
4.0
600
700
800
900
5.0
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
1.5
1.0
2.0
3.0
20
30
2.5
3.5
4.5
4.0
5.0
40
35
25
15
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
45
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
10
15
40
20
2.0
1.0
30
1.5
3.5
3.0
2.5
25
5.0
4.5
4.0
35
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
5
HGTP2N120CND, HGT1S2N120CNDS
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| HGTP2N120CNS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
| HGTP3N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP3N60A4_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTP3N60A4D | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP3N60A4D9A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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